inchange semiconductor isc product specification isc silicon npn power transistor 2SC2507 description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min) fast switching speed collector-emitter saturation voltage- : v ce(sat) = 0.7v(max.)@ i c = 10a applications designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220v switchmode applications such as swit- ching regulator?s, inverters. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 20 a i cm collector current-peak 40 a i b b base current-continuous 7 a i bm base current-peak 14 a p c collector power dissipation @ t c =25 200 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.625 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2507 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0 400 v v ce( sat ) collector-emitter saturation voltage i c = 10a; i b = 1a 0.7 v v be( sat ) base-emitter saturation voltage i c = 10a; i b = 1a 1.5 v i cbo collector cutoff current v cb = 500v; i e = 0 100 a i ceo collector cutoff current v ce = 320v; i b = 0 100 a i ebo emitter cutoff current v eb = 7v; i c = 0 1.0 ma h fe-1 dc current gain i c = 10a; v ce = 2v 15 h fe-2 dc current gain i c = 20a; v ce = 2v 8 f t current-gain?bandwidth product i c = 1a; v ce = 10v 20 mhz switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c = 10a, i b1 = -i b2 = 2a r l = 3 ; v bb2 = 4v 0.7 s isc website www.iscsemi.cn 2
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